The effect of hydrostatic pressure on resistivity and magnetic acsusceptibility has been studied in Mn-doped CdGeAs2 room-temperature (RT)ferromagnetic chalcopyrite with two types of MnAs micro-clusters. The slightincrease of temperature by about 30 K in the region between RT and Curietemperature TC causes a significant change in the positions of pressure-inducedsemiconductor-metal transition and magnetic phase transitions in low pressurearea. By conducting measurements of the anomalous Hall resistance in the fieldH \leq 5 kOe, we present experimental evidence for pressure-inducedmetamagnetic-like state during the paramagnetic phase at pressure P = 5 GPa.
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